High-Density Three-Dimensional Vertical Memory

ABSTRACT

High-density three-dimensional (3-D) vertical memory (3D-M V ) includes lightly-doped-segment (LDS) 3D-M V  and non-circular-hole (NCH) 3D-M V . The preferred LDS 3D-M V  takes advantage of longitudinal space, instead of lateral space, to guarantee normal write operation. On the other hand, the lateral cross-section of the memory hole of the preferred NCH 3D-M V  includes at least two intersecting pairs of parallel sides, with each pair formed through a single DUV exposure and having a minimum spacing &lt;50 nm.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priorities from Chinese Patent Application No. 202011330736.7, filed Nov. 24, 2020; Chinese Patent Application No. 202011591908.6, filed Dec. 29, 2020; Chinese Patent Application No. 202011645361.3, filed Dec. 30, 2020; Chinese Patent Application No. 202110574892.6, filed May 26, 2021, in the State Intellectual Property Office of the People's Republic of China (CN), the disclosure of which is incorporated herein by references in their entirety.

BACKGROUND 1. Technical Field of the Invention

The present invention relates to the field of integrated circuits, and more particularly to a three-dimensional memory.

2. Prior Art

Three-dimensional (3-D) vertical memory (3D-M_(V)) comprises a plurality of vertical memory strings. Each vertical memory string comprises a plurality of memory cells vertically stacked along a memory hole. Compared with a conventional memory whose memory cells are disposed on a two-dimensional (2-D) plane, the 3D-M_(V) has a larger storage density and a lower storage cost because its memory cells are disposed in a 3-D space. 3D-NAND is a transistor-based 3D-M_(V) and is in mass production. Its memory cells contain programmable transistors. To be more specific, each memory hole comprises five layers, including oxide, nitride, oxide (gate dielectric and ONO charge-storage layer), poly (channel layer), oxide (inner dielectric). To accommodate these five layers, the diameter of the memory hole is relatively large (˜80 nm).

U.S. Pat. No. 10,937,834 B2 issued to Zhang on Mar. 2, 2021 (hereinafter '834 patent) discloses a diode-based 3D-M_(V). Its memory cells contain programmable diodes. Comprising fewer layers, its memory hole could have a smaller diameter than 3D-NAND. FIG. 1A of the '834 patent (not included in the figures of this specification) shows that the diode-based 3D-M_(V) comprises a substrate circuit 0K, horizontal address lines 8 a-8 h, memory holes 2 a-2 d, programmable layers 6 a-6 d, vertical address lines 4 a-4 d, and memory cells 1 aa-1 h. The substrate circuit 0K is disposed on a semiconductor substrate 0. The horizontal address lines 8 a-8 h are stacked on the substrate circuit 0K and separated from each other with inter-level dielectrics 5 a-5 g. The memory holes 2 a-2 d penetrate through the horizontal address lines 8 a-8 h and the inter-level dielectrics 5 a-5 g. The programmable layers 6 a-6 d covers the sidewalls of the memory holes 2 a-2 d. A conductive material fills the remaining portions of the memory holes 2 a-2 d and form the vertical address lines 4 a-4 d. The memory cells 1 aa-1 ha are formed at the intersections of the horizontal address lines 8 a-8 h and the vertical address lines 4 a-4 d. All memory cells 1 aa-1 ha disposed on a same vertical address line 4 a are collectively referred to as a memory string 1A.

FIG. 1C of the '834 patent is a symbol for the memory cell 1. It is a programmable diode including a programmable layer 12 and a diode 14. The resistance of the programmable layer 12 can be altered with an electrical programming signal. The diode 14 has two terminals: an anode 1+ and a cathode 1−. The current can easily flow from the anode 1+ to the cathode 1−, but not vice versa. The diode has the following general property: when the applied voltage has a value smaller than the read voltage (V_(R)) or a polarity opposite to V_(R), the diode 14 has a much larger resistance than its read resistance (i.e. resistance at V_(R)). In other patents or technical literatures, diode is also referred to as selector, steering element, quasi-conductive layer, or other names. They all have the same meaning in this specification.

The diode 14 is preferably a built-in diode, i.e. it is naturally formed between the horizontal address line 8 a and the vertical address line 4 a. The benefit is apparent: there would be no separate diode layer. During programming, a voltage of −V_(P)/2 (V_(P) is the programming voltage, details will be explained in [Para 57] and FIG. 5C) is applied to selected diodes 14. To ensure that these diodes will not break down, the reverse breakdown voltage (V_(BD)) of the diodes 14 needs to satisfy the following requirement: V_(BD)>V_(P)/2. To meet this requirement, the diode 14 preferably comprises a lightly-doped region. For example, the P-N diode has a P+/i/N+ structure; or, the Schottky diode has a metal/i/N+ structure. In practice, the lightly-doped region could comprise lightly-doped N-type semiconductor material, intrinsic (i) semiconductor material, lightly-doped P-type semiconductor material, or a combination thereof.

FIG. 1 (in combination of FIG. 1E of the '834 patent) discloses a memory cell 1 aa used in prior art. The anode 1+ of the diode 14 (referring to FIG. 1E of the '834 patent) is the horizontal address line 8 a; the cathode 1− of the diode 14 (referring to FIG. 1E of the '834 patent) is the vertical address line 4 ax. Generally speaking, the anode 1+(external electrode) comprises P+ semiconductor material (for P-N diode) or metallic material (for Schottky diode); the cathode 1− (internal electrode) comprises N+ semiconductor material. In FIG. 1, the memory hole 2 a contains a lightly-doped region 4 ay and a heavily-doped region 4 ax. Its total diameter D′ is equal to d′+2r′+2t′, where d′ is the diameter of the heavily-doped region 4 ax, r′ is the thickness of the lightly-doped region 4 ay, and the t′ is the thickness of the programmable layer 6 a. Overall, prior art uses lateral space to increase V_(BD). Because r′ has a value of several nanometers to tens of micrometers, the memory hole 2 a has a large diameter D′. This leads to a small storage density and a high storage cost.

On the other hand, the memory holes of the conventional 3D-M_(V) are formed using DUV (deep ultra-violet) lithography. They all have a circular shape. The smallest circular holes formed with a single DUV exposure have a diameter of 54 nm and a horizontal pitch of 90 nm (distance between the centers of adjacent circular holes). Circular holes smaller than these have to be formed using EUV (extra ultra-violet) lithography, which is complex and expensive. It is highly desired to use the DUV lithography alone to form smaller memory holes.

Objects and Advantages

It is a principle object of the present invention to improve the storage density of the 3D-M_(V) and lower its storage cost.

It is a further object of the present invention to minimize the dimension of the memory holes and simplify its manufacturing process.

It is a further object of the present invention to maintain enough V_(BD) for the diode to ensure normal operations for the memory cells.

It is a further object of the present invention to improve the storage density of the 3D-M_(V) using the DUV lithography alone.

It is a further object of the present invention to minimize the dimension/pitch of the memory holes in the 3D-M_(V) using the DUV lithography alone.

It is a further object of the present invention to minimize the dimension/pitch of the holes in an integrated circuit using the DUV lithography alone.

In accordance with these and other objects of the present invention, the present invention discloses a high-density 3D-M_(V).

SUMMARY OF THE INVENTION

The present invention discloses two types of high-density 3D-M_(V): a lightly-doped-segment (LDS) 3D-M_(V) and a non-circular-hole (NCH) 3D-M_(V). The preferred LDS 3D-M_(V) takes advantage of longitudinal space (along the depth direction of the memory hole, i.e. along the z direction), instead of lateral space (along the radius direction of the memory hole, i.e. along the x direction), to maintain enough V_(BD) for the diode in a memory cell. Each memory hole includes a lightly-doped segment, which comprises lightly-doped region only, but not heavily-doped region. To be more specific, in the lightly-doped segment, the lightly-doped semiconductor material fully fills the memory hole laterally, and continuously traverses all horizontal address lines longitudinally. The total diameter of the memory hole D is equal to d+2t, wherein d is the diameter of the lightly-doped region 4 a, t is the thickness of the programmable layer 6 a. Apparently, D (in FIG. 2)<D′ (in FIG. 1). This can help to increase the storage density of the 3D-M_(V). On the other hand, the lightly-doped segment makes contact with a hole electrode at a contact interface. In general, the location of the contact interface is determined using the following method: suppose that the doping concentration at the lightly-doped segment is N₁ and the doping concentration at the hole electrode (heavily doped) is N₂, the contact interface is located at a position where the doping concentration is sqrt(N₁*N₂). Note that the shortest distance from the contact interface to the horizontal address lines, i.e. the interface-line distance (S), determines V_(BD). For V_(P)=5V, V_(BD)>2.5V, S should be larger than 50 nm.

In addition to the horizontal address lines, the preferred LDS 3D-M_(V) could further comprise at least one horizontal control layer. The horizontal control layer includes a plurality of horizontal control lines. Control transistors are formed at the intersections of the horizontal control lines and the lightly-doped segments. These control transistors are switches (e.g. pass gates) and collectively form a decoder for the 3D-M_(V) array. Because the horizontal control lines are disposed between the horizontal address lines and the contact interface, the interface-line spacing (S) is larger than the vertical pitch (P) of the horizontal lines (e.g. horizontal control lines; or, horizontal address lines). With a typical P of more than 50 nm, this preferred structure ensures that V_(BD)>V_(P)/2.

Accordingly, the present invention discloses a three-dimensional vertical memory including horizontal address lines and memory holes there-through, each memory hole of said memory holes comprising: a programmable layer fully covering sidewalls of said memory hole; a lightly-doped segment comprising at least a lightly doped semiconductor material, wherein said lightly doped semiconductor material fully fills said memory hole laterally and continuously traverses said horizontal address line longitudinally; a hole electrode in contact with said lightly-doped segment at a contact interface and comprising at least a heavily doped semiconductor material or metallic material, wherein a smallest distance between said contact interface and said horizontal address lines is larger than 50 nm.

The present invention further discloses a three-dimensional vertical memory, comprising: a plurality of horizontal address lines; a plurality of memory holes through said horizontal address lines; a plurality of programmable layers covering sidewalls of said memory holes; a plurality of lightly-doped segments in said memory holes and comprising at least a lightly doped semiconductor material, wherein said lightly doped semiconductor material fully fills said memory holes laterally; at least a hole electrode in contact with said lightly-doped segments at a contact interface and comprising at least a heavily doped semiconductor material or metallic material; at least a horizontal control line between said horizontal address lines and said hole electrode; at least a control transistor at the intersection of said lightly-doped segment and said horizontal control line; wherein said lightly-doped segment continuously traverses all of said horizontal address lines and said horizontal control line longitudinally.

On the other hand, the memory holes of the conventional 3D-M_(V) are formed using DUV (deep ultra-violet) lithography and they all have circular shape. The smallest circular holes formed with a single DUV exposure have a diameter of 54 nm and a horizontal pitch of 90 nm. To minimize the dimension of the memory holes, the present invention discloses a non-circular-hole (NCH) 3D-M_(V). In fact, the DUV lithography is best at making parallel lines, not circles. The minimum width of parallel lines made through a single DUV exposure is 38 nm, with a minimum horizontal pitch of 76 nm. To take advantage of this property of the DUV lithography, the preferred NCH 3D-M_(V) comprises a plurality of non-circular memory holes. The lateral cross-section (along the radius or x-y directions, not along the depth or z direction) of each non-circular memory hole includes two pairs of parallel sides. Each pair of parallel sides is formed with a single DUV exposure and has a spacing of <50 nm (could be as small as 38 nm). Examples of the preferred NCH 3D-M_(V) include rectangular (or, square)-hole 3D-M_(V), hexagonal-hole 3D-M_(V) and others. To those skilled in the art, the concept of the NCH 3D-M_(V) can be extended to other non-circular holes in any integrated circuit.

Accordingly, the present invention discloses a lateral cross-section of a non-circular hole structure in an integrated circuit, comprising: a first pair of parallel sides formed through a first single DUV exposure, wherein a first spacing between said first pair is smaller than 50 nm; a second pair of parallel sides formed through a second single DUV exposure, wherein a second spacing between said second pair is smaller than 50 nm; said first and second pairs of parallel sides intersect with each other.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a z-x cross-sectional view of a prior-art 3D-M_(V) cell. Its memory hole comprises a lightly-doped region and a heavily-doped region;

FIG. 2 is a z-x cross-sectional view of a preferred LDS 3D-M_(V) cell. Its memory hole comprises only a lightly-doped region.

FIGS. 3A-3C are z-x cross-sectional views of a first type of LDS 3D-M_(V) cells (singlet, including from first to third preferred embodiments), wherein the lightly-doped segment makes contact with the hole electrode at a lower end of the memory hole;

FIGS. 4A-4C are z-x cross-sectional views of a second type of LDS 3D-M_(V) cells (doublet, including from fourth to sixth preferred embodiments), wherein the lightly-doped segment makes contact with the hole electrode at an upper end of the memory hole;

FIG. 5A is a z-x cross-sectional view of a first preferred LDS 3D-M_(V) along the cutline A-A′ of FIG. 5B; FIG. 5B is an x-y top view of its horizontal address line 8 a; FIG. 5C is a circuit schematic of its 3D-M_(V) array;

FIGS. 6A-6D are z-x cross-sectional views of four manufacturing steps of the first preferred LDS 3D-M_(V);

FIG. 7 is a z-x cross-sectional view of a second preferred LDS 3D-M_(V);

FIG. 8A is a z-x cross-sectional view of a third preferred LDS 3D-M_(V); FIG. 8B is a circuit schematic of its 3D-M_(V) array and a decoder thereof;

FIGS. 9A-9B are cross-sectional views of two preferred doublets;

FIG. 10 is a z-x cross-sectional view of a fourth preferred LDS 3D-M_(V);

FIG. 11 is a z-x cross-sectional view of a fifth preferred LDS 3D-M_(V);

FIG. 12A is a z-x cross-sectional view of a sixth preferred LDS 3D-M_(V); FIG. 12B is a circuit schematic of its 3D-M_(V) array and a decoder thereof;

FIG. 13 is an x-y top view of a preferred square-hole 3D-M_(V);

FIGS. 14AA-14BC disclose two manufacturing steps to form the preferred square-hole 3D-M_(V) of FIG. 13. FIG. 14AA is an x-y top view at the first manufacturing step;

FIG. 14AB is the z-x cross-sectional view of FIG. 14AA along the cutline B-B′; FIG. 14B is an x-y top view at the second manufacturing step; FIGS. 14BB-14BC are the z-x cross-sectional views of FIG. 14B along the cutlines C-C and D-D′, respectively;

FIG. 15 is an x-y top view of a preferred hexagonal-hole 3D-M_(V);

FIGS. 16A-16B disclose a manufacturing step to form the preferred hexagonal-hole 3D-M_(V). FIG. 16A is an x-y top view at this manufacturing step; FIG. 16B is its z-x cross-sectional view of FIG. 16A along the cutline E-E′.

It should be noted that all the drawings are schematic and not drawn to scale. Relative dimensions and proportions of parts of the device structures in the figures have been shown exaggerated or reduced in size for the sake of clarity and convenience in the drawings. The same reference symbols are generally used to refer to corresponding or similar features in the different embodiments. The phrase “on the substrate” means the active elements (e.g. transistors) of a circuit are formed on the surface of the substrate, although the interconnects between these active elements are formed above the substrate and do not touch the substrate; the phrase “above the substrate” means the active elements are formed above the substrate and do not touch the substrate. The symbol “I” means a relationship of “and” or “or”.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Those of ordinary skills in the art will realize that the following description of the present invention is illustrative only and is not intended to be in any way limiting. Other embodiments of the invention will readily suggest themselves to such skilled persons from an examination of the within disclosure.

The present invention discloses two types of high-density 3D-M_(V): a lightly-doped-segment (LDS) 3D-M_(V) (FIGS. 2-12B) and a non-circular-hole (NCH) 3D-M_(V) (FIGS. 13-16B). The preferred LDS 3D-M_(V) takes advantage of longitudinal space (along the depth direction of the memory hole, i.e. along the z direction), instead of lateral space (along the radius direction of the memory hole, i.e. along the x direction), to ensure proper write operations of the memory cells, i.e. to maintain enough V_(BD) so that V_(BD)>V_(P)/2.

Referring now to FIG. 2 of the present invention, a preferred LDS 3D-M_(V) cell 1 aa is illustrated. It comprises a horizontal address line 8 a, a memory hole 2 a penetrating through the horizontal address line 8 a, a programmable layer 6 a fully covering sidewalls of the memory hole 2 a, and a lightly-doped segment 4 a disposed inside the memory hole 2 a. Different from FIG. 1, the memory hole 2 a within the lightly-doped segment 4 a comprises the lightly-doped region only, but not the heavily-doped region. To be more specific, in the lightly-doped segment 4 a, the lightly-doped semiconductor material fully fills the memory hole 2 a laterally, and continuously traverses the horizontal address line 8 a longitudinally. The total diameter (D) of the memory hole 2 a is equal to d+2t, wherein d is the diameter of the lightly-doped region 4 a, and t is the thickness of the programmable layer 6 a. Apparently, D<D′. This can help to increase the storage density of the 3D-M_(V).

The programmable layer 6 a could be one-time-programmable (OTP), multiple-time-programmable (MTP) or re-programmable. For the OTP memory, the programmable layer 6 a is an antifuse layer. Examples of the antifuse layer include silicon oxide, silicon nitride, or a combination thereof. For the MTP or re-programmable memory, the programmable layer 6 is a re-writable layer. Examples of the re-writable layer include resistive RAM (RRAM), phase-change material (PCM), conductive-bridge RAM, magnetic RAM (MRAM). The thickness of the programmable layer 6 a is between 1 nm and 200 nm.

The memory cell 1 aa further includes a hole electrode 3 a, which comprises heavily-doped semiconductor material or metallic material. The horizontal address line 8 a, the programmable layer 6 a, the lightly-doped segment 4 a and the hole electrode 3 a form a programmable diode, which could have one of the following A)-D) structures:

A) P-N diode I—the horizontal address line 8 a comprises P+ heavily-doped semiconductor material, whereas the hole electrode 3 a comprises N+ heavily-doped semiconductor material;

B) P-N diode II—the horizontal address line 8 a comprises N+ heavily-doped semiconductor material, whereas the hole electrode 3 a comprises P+ heavily-doped semiconductor material;

C) Schottky diode I—the horizontal address line 8 a comprises metallic material, whereas the hole electrode 3 a comprises heavily-doped semiconductor material;

D) Schottky diode II—the horizontal address line 8 a comprises heavily-doped semiconductor material, whereas the hole electrode 3 a comprises metallic material.

In the above A)-D) diode structures, the lightly-doped segment 4 a could comprise N− semiconductor material, intrinsic (i) semiconductor material, P− semiconductor material, or a combination thereof. To lower its resistance, the hole electrode 3 a could further comprise a metallic layer.

In the memory cell 1 aa, the hole electrode 3 a makes contact with the lightly-doped segment 4 a at the contact interface 3 ai. In general, the location of the contact interface 3 ai is determined using the following method: suppose that the doping concentration at the lightly-doped segment 4 a is N₁ and the doping concentration at the heavily-doped hole electrode 3 a is N₂, the contact interface 3 ai is located at a position where the doping concentration is sqrt(N₁*N₂). The shortest distance (S) between the contact interface 3 ai and the horizontal address lines 8 a-8 h, i.e. the interface-line distance (S), determines V_(BD): V_(BD) increases with S. For V_(P)=5V, V_(BD)>2.5V, S should be larger than 50 nm.

The present invention further discloses two types of LDS 3D-M_(V): singlet (FIGS. 3A-3C & FIGS. 5A-8B) and doublet (FIGS. 4A-4C & FIGS. 9A-12B). In a singlet, the 3D-M_(V) array and its peripheral circuit are integrated into a single die; whereas, in a doublet, the 3D-M_(V) array and its peripheral circuit are separated into two dice bonded face-to-face.

FIGS. 3A-3C illustrate the first type of LDS 3D-M_(V) cells, i.e. singlet. For this type, the lightly-doped segment 4 a makes contact with the hole electrode 3 a at the lower end (toward the substrate 0 where the memory string 1A is disposed, i.e. along the −z direction) of the memory hole 2 a. In the first preferred embodiment of FIG. 3A, the hole electrode 3 a is disposed inside the memory hole 2 a and surrounded by the programmable layer 6 a laterally. In the second preferred embodiment of FIG. 3B, the hole electrode 3 a is disposed inside the memory hole 2 a, but not surrounded by any programmable layer. In the third preferred embodiment of FIG. 3C, the hole electrode is shared by a number of memory holes.

FIGS. 4A-4C illustrate the second type of LDS 3D-M_(V) cells, i.e. doublet. For this type, the lightly-doped segment 4 a makes contact with the hole electrode 3 a′ at the upper end (away from substrate 0 where the memory string 1A is disposed, i.e. along the +z direction) of the memory hole 2 a. In the fourth preferred embodiment of FIG. 4A, the hole electrode 3 a′ is disposed inside the memory hole 2 a and surrounded by the programmable layer 6 a laterally. In the fifth preferred embodiment of FIG. 4B, the hole electrode 3 a′ is disposed inside the memory hole 2 a, but not surrounded by any programmable layer. In the third preferred embodiment of FIG. 4C, the hole electrode is shared by a number of memory holes.

Referring now to FIGS. 5A-8B, three preferred embodiments of the first type of the LDS 3D-M_(V) 100 (10) are disclosed, including their overall structures, circuit designs and manufacturing processes. They respectively use the memory cell 1 aa of FIGS. 3A-3C. These preferred embodiments are singlets, i.e. the overall structure 100 is formed in a single 3D-M_(V) die 10. Accordingly, these overall structures are labeled as both 100 and 10.

FIGS. 5A-5B disclose the overall structure of a first LDS 3D-M_(V) 100, which uses the memory cell 1 aa of FIG. 3A. As shown in FIG. 5A, the 3D-M_(V) die 10 comprises vertically stacked horizontal address lines 8 a-8 h, memory holes 2 a-2 d penetrating through the horizontal address lines 8 a-8 h, programmable layers 6 a-6 d fully covering sidewalls of the memory holes 2 a-2 d, and lightly-doped segments 4 a-4 d disposed in the memory holes 2 a-2 d. The hole electrodes 3 a-3 d are disposed inside the memory holes 2 a-2 d and surrounded by the programmable layers 6 a-6 d laterally. Along the z direction, the horizontal address lines 8 a-8 h has a thickness of T and a vertical pitch (distance between the centers of adjacent vertically stacked horizontal address lines) of P. All memory cells 1 aa-1 ha along a same memory hole 2 a form a memory string 1A; and, all memory strings associated with a same set of horizontal address lines 8 a-8 h form a 3D-M_(V) array 1Z. The hole electrodes 3 a-3 d are disposed at the lower end of the memory holes 2 a-2 d. They make contacts with the lightly-doped segments 4 a-4 d at the contact interfaces 3 ai-3 di. The interface-line distance S meets the requirement: S>50 nm. The horizontal address line 8 a of FIG. 5B takes the shape of a block and intersects at least two rows of memory holes 2 a-2 d, 2 e-2 h. Apparently, the horizontal address line 8 a could take the shape of strip and intersect only a single row of memory holes (referring to FIG. 13).

FIG. 5C is a circuit schematic of the 3D-M_(V) array in the 3D-M_(V) die 10 of FIGS. 5A-5B. In this embodiment, the horizontal address lines 8 a-8 h, coupled with the diode anodes of the memory cells 1 aa-1 ah, function as word lines; whereas, the vertical address lines 4 a-4 h, coupled with the diode cathodes of the memory cells 1 aa-1 ah, function as bit lines. During write (e.g. to write the memory cell 1 aa), a voltage of +V_(P)/2 is applied to the word line 8 a, while a voltage of −V_(P)/2 is applied to the bit line 4 a, with all other word and bit lines grounded. As a result, the voltage on the memory cell 1 aa is V_(P), while the voltages on other memory cells are either 0 or −V_(P)/2. During read (e.g. to read the memory cells 1 aa-1 ah on the word line 8 a), a read voltage V_(R) is applied to the word line 8 a, with all other word lines 8 b-8 h grounded. In this preferred embodiment, the bit lines 4 a-4 h are coupled with the substrate circuit 0K (including sense amplifiers). To those skilled in the art, the 3D-M_(V) die 10 may use other write/read modes.

FIGS. 6A-6D illustrate four manufacturing steps for the first preferred LDS 3D-M_(V) die 10. For reason of simplicity, the manufacturing steps for the substrate circuit 0K are omitted. An insulating layer 5 z is formed on the substrate circuit 0K and planarized. Then a number of conductive layers (e.g. heavily-doped semiconductor material or metallic material) and inter-layer dielectric layers (e.g. silicon oxide, silicon nitride) are alternately deposited. This whole stack of layers are then etched together to form the horizontal address lines 8 a-8 h (FIG. 6A). Although only eight horizontal address lines are drawn in FIG. 6A, there could be tens to hundreds of horizontal address lines in a real product.

Next, the memory holes 2 a-2 d are etched through the horizontal address lines 8 a-8 h (FIG. 6B). This is followed by depositing or growing programmable layers 6 a-6 d on sidewalls of the memory holes 2 a-2 d (e.g. using an atomic-layer deposition method, i.e. ALD) (FIG. 6C). These steps are similar to those of 3D-NAND and are well known to those skilled in the art.

After this, the memory holes 2 a-2 d are filled with a heavily-doped semiconductor material and etched back. As a result, the hole electrode 3 a-3 d are formed at the lower ends of the memory holes 2 a-2 d (FIG. 6D). Finally, the remaining portions of the memory holes 2 a-2 d are filled with a lightly-doped semiconductor material to form lightly-doped segments 4 a-4 d (FIG. 5A). Overall, the preferred LDS 3D-M_(V) die 10 has a simple structure. Because there are only two materials (lightly-doped semiconductor materials 4 a-4 d and the programmable layers 6 a-6 d) in the memory holes 2 a-2 d, the present invention has a simpler manufacturing process than 3D-NAND.

FIG. 7 discloses the overall structure of a second preferred LDS 3D-M_(V) die 10. It uses the memory cells of FIG. 3B. Different from FIG. 5A, the hole electrode 3 a, although disposed in the memory hole 2 a, has no programmable layer 6 a around it. During manufacturing, the hole electrodes 3 a-3 d are formed before the programmable layers 6 a-6 d and then etched back. The lightly-doped segments 4 a-4 d are formed thereafter.

FIGS. 8A-8B disclose the overall structure and circuit design of a third preferred LDS 3D-M_(V) 10. It uses the memory cells of FIG. 3C. A shared hole electrode 3 z 1 makes contact with all lightly-doped segments 4 a-4 d in the memory holes 2 a-2 d (FIG. 8A). For the A)-C) structures ([Para 46]-[Para 48]) of FIG. 2, the shared hole electrode 3 z 1 comprises heavily-doped semiconductor material. To lower its resistance, the shared hole electrode 3 z 1 may further comprise a layer of metallic material under the heavily-doped semiconductor material. For the D) structure ([Para 49]) of FIG. 2, the shared hole electrode 3 z 1 just comprises metallic material.

In addition to the horizontal address lines 8 a-8 h, this preferred LDS 3D-M_(V) 10 further comprises horizontal control layers 7 z 1, 7 z 2. Each horizontal control layer 7 z 1 includes a plurality of horizontal control lines 7 z 1 a, 7 z 1 b (FIG. 8A). The memory holes 2 a-2 d not only penetrate through the horizontal address lines 8 a-8 h, but also penetrate through the horizontal control lines 7 z 1 a, 7 z 1 b. The lightly-doped segments 4 a-4 d continuously traverse both the horizontal address lines 8 a-8 h and the horizontal control lines 7 z 1 a, 7 z 1 b longitudinally. Control transistors 9 a 1 are formed at the intersections of the horizontal control lines 7 z 1 a, 7 z 1 b and the lightly-doped segments 4 a-4 d. These control transistors 9 a 1-9 d 1, 9 a 2-9 d 2 function as switches (e.g. pass gates) and collectively form a decoder 7Z for the 3D-M_(V) array 1Z (FIG. 8B). Because the horizontal control lines 7 z 1 a, 7 z 1 b are disposed between the horizontal address lines 8 a-8 h and the shared contact interface 3 z 1, the interface-line spacing (S) is larger than the vertical pitch (P) of the horizontal lines (e.g. the horizontal address lines 8 a-8 h or the horizontal control lines 7 z 1 a, 7 z 1 b). With a typical P of more than 50 nm, this preferred structure guarantees a proper write operation.

As an operation example of the decoder 7Z, when the horizontal control line 7 z 1 b is at a first control voltage, the transistors 9 a 1, 9 d 1 switch on; when the horizontal control line 7 z 1 a is at a second control voltage, the transistors 9 c 2, 9 d 2 switch off; on the other hand, when the horizontal control line 7 z 2 b is at the first control voltage, the transistors 9 c 2, 9 d 2 switch on; when the horizontal control line 7 z 2 a is at the second control voltage, the transistors 9 a 2, 9 b 2 switch off. Under the above configuration, only the signals on the bit line 4 d can be transmitted to the sense amp in the substrate circuit 0K through the shared hole electrode 3 z 1.

Although the horizontal address lines 8 a-8 h and the horizontal control lines 7 z 1-7 z 1 b are both horizontal lines, they form different devices at their respective intersections with the lightly-doped segments 4 a-4 d: 1) memory cells 1 aa-1 ha are formed at the intersections between the horizontal address lines 8 a-8 h and the lightly-doped segments 4 a-4 d. These memory cells 1 aa-1 ha are two-terminal devices. During programming, the layers 6 a-6 d at the memory cells 1 aa-1 ha would go through material change; 2) pass gates 9 a 1-9 b 1 are formed at the intersections between the horizontal control lines 7 z 1 a-7 z 1 b and the lightly-doped segments 4 a-4 d. These pass gates 9 a 1-9 b 1 are three-terminal devices. During programming, the layers 6 a-6 d at the pass gates 9 a 1-9 b 1 do not go through any material change. Note that, during programming/read, the biases applied on each terminal of the memory cells 1 aa-1 ha and the pass gates 9 a 1-9 b 1 are different.

Referring now to FIGS. 9A-12B, three preferred embodiments of the second type of the LDS 3D-M_(V) 100 (including from fourth to sixth preferred embodiments) are disclosed, including their overall structures, circuit designs and manufacturing processes. They respectively use the memory cell 1 aa of FIGS. 4A-4C. These preferred embodiments are doublets, i.e. the overall structure is formed in two dice 10, 10′, which are bonded face-to-face. The hole electrodes 3 a′-3 d′ are disposed at the upper end of the memory holes 2 a-2 d, which is far away from the substrate 0, i.e. along the +z direction.

In FIGS. 9A-9B, a first die 10 is a 3D-M_(V) die, while a second die 10′ is a peripheral-circuit die, which includes at least a portion of the peripheral circuits of the 3D-M_(V) array 1Z. Note that that portion of the peripheral circuits of the 3D-M_(V) array 1Z is absent in the 3D-M_(V) die 10. Apparently, the dice 10 and 10′ are two different dice which are disposed on different semiconductor substrates 0, 0′.

FIGS. 9A-9B are focused on different means to implement inter-die connections. In the preferred embodiment of FIG. 9A, after forming a first insulating dielectric 168 a on the front surface of the first die 10, a plurality of first vias 160 za are formed in the first insulating dielectric 168 a. This is followed by forming a plurality of second vias 160 zb in a second insulating dielectric 168 b on the front surface of the second die 10′. After this, the second die 10′ is flipped. The first and second vias 160 za, 160 zb are aligned before the first and second dice 10, 10′ are bonded. Consequently, the inter-die connections 160 are realized between the first and second dice 10, 10′ through the first and second vias 160 za, 160 zb.

In the preferred embodiment of FIG. 9B, the front surface of the first die 10 faces upward (along the +z direction), while the frond surface of the second die 10′ faces downward (along the −z direction). The inter-die connections 160 are realized through micro-bumps 160 x. The preferred embodiments of FIGS. 9A-9B use wafer bonding technique: a first wafer where the first die 10 is disposed is first bonded with a second wafer where the second die 10′ is disposed, then these two wafers are cut together to form the doublet 100. In these preferred embodiments, the first and second dice 10, 10′ have the same area, and their edges are aligned.

FIG. 10 discloses the overall structure of a fourth LDS 3D-M_(V) 100, which uses the memory cell 1 aa of FIG. 4A. The hole electrodes 3 a′-3 d′, disposed at the upper end of the memory holes 2 a-2 d, are surrounded by the programmable layers 6 a-6 d. They make contacts with the lightly-doped segments 4 a-4 d at the contact interfaces 3 ai′-3 di′. Its initial manufacturing process is similar to those in FIGS. 6A-6B. The subsequent manufacturing process includes the following steps: 1) to form the lightly-doped segments 4 a-4 d; 2) to dope the upper ends of the lightly-doped segments 4 a-4 d to form the hole electrodes 3 a′-3 d′, or etch back a portion of the lightly-doped segments 4 a-4 d before depositing heavily-doped semiconductor material inside the memory holes 2 a-2 d. The shortest distance between the contact interfaces 3 ai′-3 di′ and the horizontal address lines 8 a-8 d is the contact-line distance S. To guarantee the write operation, S should meet the requirement, i.e. S>50 nm. Note that the second substrate 0′ of the second die 10′ is disposed on the first die 10 and flipped. The second substrate circuit 0K′ of the second die 0′ is coupled with the hole electrodes 3 a′-3 d′. At least a portion of the peripheral circuit of the 3D-M_(V) array 1Z is disposed on the second substrate circuit 0K′.

FIG. 11 discloses the overall structure of a fifth preferred LDS 3D-M_(V) 100. It uses the memory cell of FIG. 4B. The hole electrodes 3 a′-3 d′ are not surrounded by any programmable layer. Different from FIG. 10, forming the hole electrodes 3 a′-3 d′ involves the following steps: 1) etch back a portion of the lightly-doped segments 4 a-4 d and the programmable layers 6 a-6 d; 2) deposit heavily-doped semiconductor material inside the memory holes 2 a-2 d.

FIGS. 12A-12B disclose the overall structure and the circuit design of a sixth preferred LDS 3D-M_(V) 100. It uses the memory cell of FIG. 4C. A shared hole electrode 3 z 1 makes contact with all lightly-doped segments 4 a-4 d in the memory holes 2 a-2 d. This preferred LDS 3D-M_(V) 100 further comprises horizontal control layers 7 z 1′, 7 z 2′. Each horizontal control layer 7 z 1′ includes a plurality of horizontal control lines 7 z 1 a′, 7 z 1 b′ (FIG. 12A). The memory holes 2 a-2 d not only penetrate through the horizontal address lines 8 a-8 h, but also penetrate through the horizontal control lines 7 z 1 a′, 7 z 1 b′. The lightly-doped segments 4 a-4 d continuously traverse both the horizontal address lines 8 a-8 h and the horizontal control lines 7 z 1 a′, 7 z 1 b′ longitudinally. Control transistors 9 b 1′, 9 a 1′ are formed at the intersections of the horizontal control lines 7 z 1 a′, 7 z 1 b′ and the lightly-doped segment 4 a, 4 b (FIG. 12A). These control transistors 9 a 1′-9 d 1′, 9 a 2′-9 d 2′ function as switches (e.g. pass gates) and collectively form a decoder 7Z′ for the 3D-M_(V) array 1Z (FIG. 12B).

On the other hand, the memory holes 2 a-2 h of the conventional 3D-M_(V) are formed using DUV (deep ultra-violet) lithography. They all have circular shape. The smallest circular holes formed with a single DUV exposure have a diameter of 54 nm and a horizontal pitch of 90 nm. To minimize the dimension of the memory holes, the present invention discloses a non-circular-hole (NCH) 3D-M_(V). In fact, the DUV lithography is best at making parallel lines, not circles. The minimum width of parallel lines made through a single DUV exposure is 38 nm, with a minimum horizontal pitch of 76 nm. To take advantage of this property of the DUV lithography, the preferred NCH 3D-M_(V) comprises a plurality of non-circular memory holes. The lateral cross-section (along the radius or x-y directions, not along the depth or z direction) of each non-circular memory hole includes two pairs of parallel sides. Each pair of parallel sides is formed with a single DUV exposure and has a spacing of <50 nm (could be as small as 38 nm). Examples of the preferred NCH 3D-M_(V) include rectangular (or, square)-hole 3D-M_(V) (FIGS. 13-14BC), hexagonal-hole 3D-M_(V) (FIGS. 15-16B) and others. To those skilled in the art, the concept of the NCH 3D-M_(V) can be easily extended to other non-circular holes in any integrated circuit (e.g. 3D-NAND).

FIG. 13 shows a preferred square-hole 3D-M_(V). It comprises a plurality of horizontal address lines 08 dz, 08 da-08 dc. They take the shape of strips, with width and spacing equal to the minimum dimension formed by a single DUV exposure. This preferred embodiment is different from FIG. 5B. In FIG. 5B, the horizontal address line 8 a takes the form of blocks (the width of a block is large enough to accommodate multiple rows of memory holes 2 a-2 h). In this preferred embodiment, the memory hole 2 a is disposed between two horizontal address lines 08 dz, 08 da and could form one memory cell with each horizontal address line (e.g. 08 dz). As a result, each memory cell in the preferred NCH 3D-M_(V) could store two bits of information and realize 2-bit-per-cell. In this preferred embodiment, the shape of the memory cell 2 a is a square. Its dimension is 38 nm, far smaller than the diameter of circular (i.e. 54 nm). Using only the DUV lithography, the preferred square-hole 3D-M_(V) has a larger storage density than the circular-hole 3D-M_(V).

FIGS. 14AA-14AB disclose a first manufacturing step to form the preferred square-hole 3D-M_(V) of FIG. 13. After forming the horizontal address layers 08 a-08 d (which are separated by the inter-layer dielectrics 05 a-05 c along the z direction), a first DUV exposure is performed to form a first set of parallel-line patterns. These parallel-line patterns are etched to form trenches 02 a-02 d, which separate the horizontal address layers into horizontal address lines 08 da-08 dc. Here, the width and spacing of the horizontal address lines 08 da-08 dc are the minimum dimension formed by a single DUV exposure (e.g. 38 nm).

FIGS. 14BA-14BC disclose a second manufacturing step to form the preferred square-hole 3D-M_(V). First the trenches 02 a-02 d are filled with trench dielectrics 02 ax-02 dx and planarized. An etch-stop layer is then formed on the trench dielectrics 02 ax-02 dx. At this moment, a second DUV exposure is performed to form a second set of parallel-line patterns. These parallel-lie patterns are etched to form etch-stop strips 09 a. Again, the width and spacing of these etch-stop strips 09 a are the minimum dimension formed by a single DUV exposure. In this preferred embodiment, the etch-stop strips 09 a intersect with the horizontal address lines 08 da-08 dc at 900 (FIG. 14BA). Then another etch step is performed to etch the trench dielectrics 02 ax-02 dx using the horizontal address lines 08 da-08 dc and the etch-stop strips 09 a as hard masks. As a result, the portion of the trench dielectrics 02 ax-02 dx under the horizontal address lines 08 da-08 dc or the etch-stop strips 09 a are not etched (FIG. 14BB), while the portion not under the horizontal address lines 08 da-08 dc or the etch-stop strips 09 a are etched to form square holes 2 a-2 d (FIG. 14BC). Note that these square holes 2 a-2 d have the minimum dimension from a single DUV exposure (e.g. 38 nm) and their horizontal pitch is smaller than 90 nm.

Besides the square-hole 3D-M_(V), other types of the NCH 3D-M_(V) may also be fabricated. FIG. 15 illustrates a preferred hexagonal-hole 3D-M_(V). Its memory hole 2 a has six sides, which form three pairs of parallel lines, including a first pair 0 a 1, 0 a 2; a second pair 0 b 1, 0 b 2; a third pair 0 c 1, 0 c 2. The width and spacing between parallel lines within each pair are the minimum dimension from a single DUV exposure.

FIGS. 16A-16B disclose the manufacturing steps to form the preferred hexagonal 3D-M_(V) of FIG. 15. Similar to FIGS. 14AA-14AB, the trenches 02 a-02 d are etched and filled with trench dielectrics 02 ax-02 dx. After that, a first planarized etch-stop strips 18 a, 18 b and a second planarized etch-stop strips 28 a, 28 b are separately formed. During the final etch step to the trench dielectrics 02 ax-02 dx, the portion of the trench dielectrics 02 ax-02 dx under the horizontal address lines 08 da-08 dc or the etch-stop strips 18 a, 18 b, 28 a, 28 b are not etched; whereas, the portion not under the horizontal address lines 08 da-08 dc or the etch-stop strips 18 a, 18 b, 28 a, 28 b are etched to form hexagonal holes 2 a-2 c.

While illustrative embodiments have been shown and described, it would be apparent to those skilled in the art that many more modifications than that have been mentioned above are possible without departing from the inventive concepts set forth therein. The invention, therefore, is not to be limited except in the spirit of the appended claims. 

What is claimed is:
 1. A three-dimensional vertical memory including horizontal address lines and memory holes there-through, each memory hole of said memory holes comprising: a programmable layer fully covering sidewalls of said memory hole; a lightly-doped segment comprising at least a lightly doped semiconductor material, wherein said lightly doped semiconductor material fully fills said memory hole laterally and continuously traverses said horizontal address line longitudinally; a hole electrode in contact with said lightly-doped segment at a contact interface and comprising at least a heavily doped semiconductor material or metallic material, wherein a smallest distance between said contact interface and said horizontal address lines is larger than 50 nm.
 2. The memory according to claim 1, wherein said smallest distance is larger than a vertical pitch of said horizontal address lines.
 3. The memory according to claim 1 being a singlet, further comprising a semiconductor substrate, wherein: said horizontal address lines are disposed above said semiconductor substrate; and, said hole electrode is disposed between said horizontal address lines and said semiconductor substrate.
 4. The memory according to claim 1 being a doublet, further comprising: a first die, wherein said horizontal address lines are disposed in said first die; a second die, wherein said second die comprises a second substrate circuit; wherein said hole electrode is disposed between said second substrate circuit and said horizontal address lines.
 5. The memory according to claim 1, wherein said hole electrode is surrounded by said programmable layer.
 6. The memory according to claim 1, wherein said hole electrode is not surrounded by said programmable layer.
 7. The memory according to claim 1, further comprising a horizontal control line between said horizontal address lines and said hole electrode.
 8. The memory according to claim 7, further comprising a control transistor at the intersection of said horizontal control line and said lightly-doped segment.
 9. A three-dimensional vertical memory, comprising: a plurality of horizontal address lines; a plurality of memory holes through said horizontal address lines; a plurality of programmable layers covering sidewalls of said memory holes; a plurality of lightly-doped segments in said memory holes and comprising at least a lightly doped semiconductor material, wherein said lightly doped semiconductor material fully fills said memory holes laterally; at least a hole electrode in contact with said lightly-doped segments at a contact interface and comprising at least a heavily doped semiconductor material or metallic material; at least a horizontal control line between said horizontal address lines and said hole electrode; at least a control transistor at the intersection of said lightly-doped segment and said horizontal control line; wherein said lightly-doped segment continuously traverses all of said horizontal address lines and said horizontal control line longitudinally.
 10. The memory according to claim 9, wherein a smallest distance between said contact interface and said horizontal address lines is larger than 50 nm.
 11. The memory according to claim 9, wherein a smallest distance between said contact interface and said horizontal address lines is larger than a vertical pitch of said horizontal address lines.
 12. The memory according to claim 9 being a singlet, further comprising a semiconductor substrate, wherein: said horizontal address lines are disposed above said semiconductor substrate; and, said hole electrode is disposed between said horizontal address lines and said semiconductor substrate.
 13. The memory according to claim 9 being a doublet, further comprising: a first die, wherein said horizontal address lines are disposed in said first die; a second die, wherein said second die comprises a second substrate circuit; wherein said hole electrode is disposed between said second substrate circuit and said horizontal address lines.
 14. The memory according to claim 9, wherein said hole electrode is surrounded by said programmable layer.
 15. The memory according to claim 9, wherein said hole electrode is not surrounded by said programmable layer.
 16. A lateral cross-section of a non-circular hole structure in an integrated circuit, comprising: a first pair of parallel sides formed through a first single DUV exposure, wherein a first spacing between said first pair is smaller than 50 nm; a second pair of parallel sides formed through a second single DUV exposure, wherein a second spacing between said second pair is smaller than 50 nm; said first and second pairs of parallel sides intersect with each other.
 17. The non-circular hole structure according to claim 16, wherein a horizontal pitch of said non-circular hole structure is smaller than 90 nm.
 18. The non-circular hole structure according to claim 16, wherein said non-circuit hole structure is a non-circular memory hole.
 19. The non-circular hole structure according to claim 18, wherein a horizontal pitch of said non-circular memory hole is smaller than 90 nm.
 20. The non-circular hole structure according to claim 16, wherein said integrated circuit is a three-dimensional vertical memory. 